(China (Mainland))
Product Summary
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 FQA9N90C |
Fairchild Semiconductor |
MOSFET 900V N-Channel Q-FET |
Data Sheet |
Negotiable |
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FQA9N90C_F109 |
Fairchild Semiconductor |
MOSFET 900V N-Channel QFET |
Data Sheet |
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